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1·The electron beam lithography and its improvement are introduced also.

同时还介绍了电子束光刻技术及其改进。

2·DY2001A Electron Beam Lithography System (EBLS) is developed as a practical miniature EBLS.

DY 2001a型电子束曝光机是作为实用化的小型曝光系统而研制的。

3·Electron beam lithography machine is the key instrument for mask making and research of nanometer device.

电子束曝光技术是掩模版制作和纳米器件研究的主要手段。

4·They begin with a small sheet of graphene and carve channels into the material using electron beam lithography.

从一小片石墨烯开始，采用电子束曝光在材料上刻出通道。

5·The deflection system of an electron beam lithography tool is used to control deflection scanning of electron beam.

电子束曝光机的偏转系统控制电子束偏转扫描。

6·The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.

针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。

7·The composition, principle and working procedure of the application software of EBES-40A electron beam Lithography system are introduced.

本文简要地介绍了一种圆形电子束曝光机应用软件的结构、工作原理及工作过程；

8·By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.

将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。

9·The manufacture of high-line-density X-ray transmission gratings for X-ray spectroscopy by using electron beam lithography and X-ray lithography was reported.

针对X射线透射光栅摄谱仪中的高线密度光栅，研究了采用电子束曝光和X射线曝光技术结合制作高线密度X射线透射光栅的工艺技术。

10·The projection electron beam lithography with angular limitation(PEBL)is potentially one of the most attractive techniques for nano lithography in the21st Century.

具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。