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1·The new research of MOSFET-gate dielectric was summarized.

本文综述了MOSFET栅介质的最新研究状况。

2·But the fabrication of self aligned double gate MOSFET is too complicated.

但是目前自对准的双栅MOSFET的工艺制作相当困难。

3·The stability analysis of MOSFET used in RFIC design is presented in detail.

本文详细分析了用于射频集成电路设计的mos场效应管的稳定特性。

4·ISFET is based on MOSFET structure and used to measure biochemical parameter.

ISFET是基于MOS结构，用于生化参数测量的传感器。

5·The fundamental principles of the bulk-driven MOSFET and mixer are discussed.

讨论分析了混频器和衬底驱动MOSFET的工作原理。

6·The sound impression is perfect, surpassing the common Source MOSFET circuit.

声音的感觉是完美的，超越了类似的MOSFET电路。

7·This is done with an integrator which controls a power MOSFET as source follower.

这是通过一个集成的控制一个功率MOSFET 的源极跟随。

8·The linear and saturate portion of MOSFET static state behavior is also included.

而MOSFET的静态线性区和饱和区的特性也用于表示阳极电压。

9·The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.

提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。

10·Skilled with MOSFET device engineering, especially in its reliability and performance aspects.

具有MOSFET元件工程技能，其中，尤其著重于可靠度及高效能方面。