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1·The gain of the APD can be controlled by the magnitude of the reverse bias voltage.

APD的增益可以由反向偏置电压的幅度来控制。

2·This condition, known as reverse bias, is not conducive to current flow through the junction.

这种叫做反向偏置的状态不利于电流穿越结。

3·Black lines are without external bias and red lines are with and external reverse bias voltage.

黑线表示没有偏压，红线表示有一个反向偏置电压。

4·This paper illustrates the physical essence transferred for the Collector Junction from reverse bias to forward bias.

本文简述了晶体管作开关运用时集电结由反偏状态向正偏状态转化的物理本质。

5·The Usoff and Ir are respectively the reverse bias voltage in the off-state and the reverse current through the switch.

其中Uoff在断态时的反向偏置电压，ir是流过开关的反向漏电流。

6·The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.

还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论。

7·The relation of stress time to parameter degradation is investigated under the condition of reverse bias of base-emitter junction.

在基极-发射极反向偏置的条件下，研究了应力作用时间与器件参数的退化关系。

8·Measuring the reverse bias current of an APD requires an instrument that can measure current over a wide range as well as output a voltage sweep.

测量APD的反向偏置电流需要一种能够在很宽范围内测量电流并且能输出扫描电压的仪器。

9·The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .

位移电流的机理只对反向偏压或要维持空间电荷层所需要的非常弱的正向偏压条件下的电容器才有用。

10·A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.

一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。