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1·Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.

本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。

2·As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).

作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。

3·A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.

介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。

4·Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.

大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。

5·Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.

在传统互补式金氧半薄膜电晶体的应用上，双极性传输是一基本且重要的特性。