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1·For devices formed on an oxide isolation layer, the poly - filled trench desirably penetrates this isolation layer thereby improving thermal conduction from the active regions to the substrate.

对于形成在氧化物隔离层上的器件，多晶填充的沟槽理想地穿透该隔离层从而改进从有源区到衬底的热传导。

2·A related layer is the field oxide, which provides isolation from other device structures.

一个相关层是场氧化层，使其与其它器件结构分离。