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1·The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.

净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。

2·In the case of considering the misfit dislocation, relaxed lattice mismatch, the radius of curvature and density of misfit dislocation were calculated.

在考虑存在失配位错的情况下，计算了驰豫晶格失配、曲率半径和失配位错密度。

3·The critical thickness is determined from the zero formation energy of a misfit dislocation. i. e. the amount of reduced mismatch strain energy equaling the amount of creased dislocation self energy.

利用位错形成能等于零(即错配应变能的降低等于位错自能)的条件，得到了外延生长薄膜的临界厚度。