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1·DLC films were prepared on silicon by pulse-arc plasma deposition.

利用脉冲多弧离子镀技术在硅基底上沉积类金刚石薄膜。

2·Furthermore, the absorption and shielding mechanism of laser by arc plasma was discussed.

同时，文中还对电弧的等离子体特性对激光吸收和屏蔽的机理进行了论述。

3·Diamond film wafers with different thickness were prepared by high power DC arc plasma jet CVD method.

采用高功率直流电弧等离子体cvd工艺制备了不同厚度的无裂纹自支撑金刚石厚膜。

4·The typical equipment, the basic principle and arc plasma process of anodic vacuum arc coating are presented.

介绍了阳极真空电弧镀膜方法的镀膜装置、工作原理及电弧等离子体微观过程。

5·A substrate for the growth of a carbon nanotube having a catalyst layer microparticulated by using an arc plasma gun.

本发明涉及具有使用电弧等离子枪进行微粒化的催化剂层的碳纳米管成长用基板。

6·The particle diameter of the catalyst for the growth of CNT is regulated by the number of shots of the arc plasma gun.

通过电弧等离子枪的发射数控制CNT成长用催化剂的粒径。

7·The helical instability problem of an arc plasma column with a parabolic current profile in a magnetic field is discussed.

讨论了具有抛物线形电流分布的电弧等离子体柱在磁场中的不稳定性问题。

8·The nanometer tin powders were prepared by DC arc plasma evaporation method using a self-designed and fabricated apparatus.

采用高纯锡，通过自行设计的直流电弧等离子体蒸发设备制备了纯净的纳米锡粉。

9·Nanosize aluminium nitride (AIN) powder was prepared by evaporating and nitriding high purity aluminium in DC arc plasma reactor.

采用直流电弧等离子体蒸发-凝聚法制备了高纯氮化铝(ain)纳米粉末。

10·The first part of this paper deals simply with the common knowledge of plasma and the general aspect on application of arc plasma.

本文的第一部份简述了等离子的基本知识和电弧等离子体的应用概况。