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1·It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.

发现表面高密度缺陷减薄了势垒层厚度，显著增强了热电子隧穿过程。

2·It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.

假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。

3·It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.

压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。

4·Three kinds of different new approaches to construct nanometer sized double barrier tunneling junctions for room temperature single electron tunneling studies were reported.

利用针尖修饰及纳米组装技术，采用三种不同的新方法构造出串联双隧穿结结构。

5·It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.

发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。

6·We have used STM to investigate the electron tunneling spectroscopy, as well as the tunneling barrier heights, in two kinds of iron oxides prepared differently on iron single crystal surfaces.

报道了利用扫描隧道显微术（STM）对金属表面氧化物层进行电子隧道谱研究的结果。

7·The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.

以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。

8·The electron spin dependent tunneling and susceptibility are studied.

研究了电子的自旋相关的隧穿和极化。

9·The gate current is produced by the tunneling, the electron surmounting and percolation.

发现器件的栅电流不是由单一的隧穿引起，同时还有电子的翻越和渗透。

10·The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.

本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。