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1·Nanometer multilayer metal films have been emphasized for their grand magnetic resistance.

纳米金属多层膜由于其巨磁电阻性能而受到人们的重视。

2·The switch magnetic resistance servo motor is driven by the first level deceleration belt transmission and a motor shaft does not bear rigid shock;

开关磁阻伺服电机经一级减速皮带传动，电机轴不承受刚性冲 击；

3·The semiconductor memory device can reduce the writing current thereof without degrading the magnetic resistance value and thermal stability thereof.

本发明的半导体存储装置可降低其写入电流且不会劣化其磁阻值与热稳定性。

4·The invention relates to a four-phase (8/6 pole) switch magnetic resistance motor control device of a single current sensor and a realized method thereof.

本发明涉及一种单电流传感器的四相（8/6极）开关磁阻电机控制装置及其实现 方法。

5·Measuring velocity technology can be actualized by muzzle loops, extrapolating method, on-board sensor and GMR (the giant magnetic resistance) turns-counting.

初速时测技术可通过炮口线圈测速、外推法、弹载传感器及地磁计转数法实现。

6·This paper studies the thermal conductivity, the electrical resistivity and the magnetic resistance of high purity copper, some experimental data are presented.

本文研究了高纯铜线的热导率、电阻率以及磁阻等特性，给出了必要的实验数据。

7·In the structure parameter design of electromagnetic bearings, the error ignoring the ferromagnetic resistance in the magnetic circuit calculation was analyzed.

以实际工程应用为背景，针对电磁轴承的结构参数设计，分析了忽略铁磁材料磁阻对磁路计算带来的误差。

8·Magnetic resistance increases with the applying field, further more, with the doping increasing, the maximum of magnetic resistance shifts to lower temperature regime.

磁致电阻率的比值随磁场的增大而增大，并且它随掺杂浓度的增加迁移到更低的温度处。

9·The present invention relates to combined dry and wet etching process for multilayer film, especially in anisotropic magnetic resistance effect (AMR) sensor manufacture.

本发明涉及多层膜的蚀刻方法，特别是各向异性磁电阻效应(amr)传感器制造中所使用的多层膜的蚀刻方法。

10·This paper introduces an effect of gain magnetic resistance for multilayer magnetic films , as well as the principle, structure, characteristic and application of the GMR sensors.

本文介绍了各种磁性材料的巨磁电阻效应及其传感器的原理、结构、特性和应用。