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1·It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.

其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。

2·The molecular level flaw includes the flaw of acceptor, forwards acceptor and backward acceptor.

分子水平的缺陷包括：受体前缺陷、受体缺陷和受体后缺陷。

3·The level changes linearly in the acceptor defect layers.

在受主缺陷扩散层中费未能级的变化是线性的。

4·The study mainly include the aggregation behavior of hemicyanine derivatives in LB films, the influence of the donor acceptor on the excited level and excited lifetime of the hemicyenine derivatives.

主要包括半花菁衍生物在LB膜中的聚集特性；亲水基团与疏水基团对半花菁衍生物激发态寿命的影响等。