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1·Junction type Field Effect Transistor?

接合型场效应晶体管JFET ？

2·Junction - Gate Field Effect Transistor?

结型栅场效应晶体管JGFET ？

3·A field effect transistor and a method of fabricating the field effect transistor.

场效应晶体管以及制造场效应晶体管的方法。

4·The invention is applied to improving the manufacture efficiency of the field effect transistor.

本发明应用于提高场效应晶体管的制造效率。

5·Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).

它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。

6·Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.

本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。

7·Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.

场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。

8·The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;

所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；

9·The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.

新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。

10·The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。