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1·A novel kinetics model for dc reactive sputtering was proposed.

提出了一个新的直流反应溅动力学模型。

2·For reactive sputtering, the gradient films with varying ratio of chemical component can be prepared by changing gas flow rate continuously.

对于反应溅射，可通过连续改变反应气体流量制得化学成分比连续变化的梯度薄膜。

3·Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.

通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。

4·In particular, the amorphous titanium oxide is obtained by using the reactive sputtering method and via deposition at a low temperature and at a high film formation rate.

特别是利用反应性溅射法，在低温下以高成膜速度进行堆积，得到非晶的氧化钛。

5·The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.

论述了高温直流磁控反应溅射法制备ito透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响。

6·Reactive magnetron sputtering was used to prepare many kinds of compound films extensively.

反应磁控溅射被广泛应用于制备化合物薄膜。

7·A1N films grown by low temperature reactive r. f. sputtering are investigated with spectrum analysis.

本文用光谱分析的方法研究低温反应射频溅射生长的A1N薄膜。

8·The compound fraction of target surface was gotten from the rate equations of sputtering and the transport equations of reactive particles .

由溅射速率方程和反应粒子输运方程得出了靶面化合物的覆盖度。

9·HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.

用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。

10·Niobium oxide optical thin films have been prepared by low frequency reactive magnetron sputtering system.

利用低频反应磁控溅射制备五氧化二铌光学薄膜。