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1·Temperature compensate transistor has good compensate effect to sensitivity drift of the pulse image sensor, the results apply equally to other fields.

给出的温度补偿晶体管对该脉象传感器的灵敏度温度漂移补偿效果好，有推广应用前景。

2·The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.

最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。

3·The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。

4·Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.

本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。