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1·Finally, the static and transient variation of electron drift velocity in high electric fields are studied.

最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。

2·The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.

最后对高场下电子漂移速度的稳态和瞬态变化规律进行了研究。

3·Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described.

介绍了研究集成电路互连线电迁移的两种方法：加速寿命试验和移动速度试验。

4·The electron drift velocity as a function of E/N is given, which is in good agreement with experimental result.

计算了不同E/N条件下电子在氮气中的漂移速度，结果与实验数据符合得很好。

5·Set up was a momentum analysis model of the drift velocity in stagnant liquid of long bubbles in an annular tube.

建立圆管内滞止液体中长气泡漂移速度动量分析模型。

6·The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.

作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。

7·A solution process of the equation of Ekman drift motion in infinite deep sea is given in this paper. Furthermore, the regularity of vertical distribution of drift velocity is discussed.

本文给出了无限水深情况下漂流运动方程的求解过程，以及风海流速度垂直分布的规律性。

8·The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n drift in LDMOS at on state is obtained.

该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS 漂移区中的电场分布。

9·Under high velocity flow conditions, cascade losses are mainly caused by radial drift of the boundary layer along the suction surface and by blade wakes.

在高速流动条件下，叶栅损失主要是吸力面边界层径向串流及其尾迹。

10·With the estimation of the zero drift of accelerometer, the precision of the vertical velocity and height can be improved and the measurement of the acceleration can be got without zero drift.

该滤波器能够有效滤除海浪杂波的干扰，获得高质量的高度信号和垂向速度信号。