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1·Activation: the metal surface passivation state disappear role.

活化：使金属表面钝化状态消失的作用。

2·Device Processing: Etching. Surface passivation; dielectric films.

元件制程：蚀刻，表面钝化，介电材料薄膜。

3·Our results demonstrated that the C-Dots were toxic and the surface passivation with PEG reduced the toxicity effectively.

实验证实碳点存在一定的毒性，并且PEG钝化后碳点毒性降低。

4·The influences of surface passivation of photoluminescence and electroluminescence properties of porous silicon have been presented.

报道多孔硅的表面钝化对其光致发光和电致发光的影响。

5·The experiment results show that the Schottky barrier properties and the surface passivation actions to silicon devices of the films are good.

实验表明该膜有良好的肖特基势垒特性和对硅器件的表面钝化作用。

6·It is described that the innovatory technology of selective diffusion and study on surface passivation in theory for crystalline silicon solar cell.

本文的主要内容是介绍晶体硅太阳电池选择性扩散新工艺和表面钝化的理论研究。

7·The latest results of the photoluminescence spectra of porous silicon by surface passivation and laser dye impregnated in porous silicon were presented in this paper.

介绍了多孔硅经表面钝化后，其发光强度和谱线峰位的稳定性，以及多孔硅激光染料镶嵌膜的荧光光谱等方面的最新成果。

8·The technology of surface passivation and morphology controlling of porous silicon (PS) exhibits high scientific values for both fundamental and application research.

多孔硅表面钝化和表面形貌的控制技术具有重要的基础和应用研究价值。

9·The influence of encapsulation and surface passivation on the reflection curves is discussed, and theoretical reflection curves have verified the experimental results.

分析了电池封装和电池表面钝化对反射曲线的影响，并验证了实验结果。

10·A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.

提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。