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1·This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.

并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。

2·Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.

可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。

3·In this paper showed a measurement method of minority carrier lifetime.

本文提出了一种测量少数载流子寿命的方法。

4·The injecting saturate minority carrier current may be reduced the most effectively by the first grain boundary.

其中，第一个晶粒间界能够最有效地减少注入饱和少数载流子电流。

5·A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.

本文提出了一种新的多晶硅发射区少数载流子注入理论。

6·The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.

对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。

7·Open circuit voltage decay (OCVD) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight, easy operation and good repeatability.

开路电压衰减法(OCVD)具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。

8·This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.

本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。

9·We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.

利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。

10·The patented TMBS structure, however, diminishes minority carrier injections to the drift region, minimizing stored charges and improving switching speed.

但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。