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1·Based on step recovery diode, a pulse fast edge shaping circuit is realized.

阐述了一种基于阶跃恢复二极管的脉冲快速沿整形电路设计。

2·A new ultra wideband (UWB), low-complexity and step recovery diode Gaussian pulse generator is introduced.

提出了一种新型的用于超宽带系统的高斯脉冲发生器。

3·Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。

4·In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed.

探讨了快恢复二极管制造过程中，选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。

5·This paper is a report of the designing and making of a UWB pulse generator using SRD (step recovery diode) and microwave transmission line and by means of intervention and elimination.

文中利用SRD(阶跃恢复二极管)与微波传输线，通过错位对消的方法设计与制作了UW B脉冲发生器。

6·The reverse recovery properties of the freewheel diode are also distinctly improved.

续流二极管的反向恢复特性也得到了明显改善。

7·Recycling waste electronic: electronic feet recovery, film recovery and recycling, triode recovery, diode cable wire recycling, industrial waste recycling.

回收废电子：电子脚回收、菲林回收、二极管回收、三极管回收、废电缆电线回收、工业电子回收。

8·The results of test indicate that the reverse recovery softness of the diodes is increased to about 1.0, and is more improved than the conventional PIN diode.

实验结果表明，该二极管的反向恢复软度因子提高到了1.0左右，较传统的PIN二极管有了较大改善。

9·A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.

提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。

10·The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.

测试结果表明，此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性，在国际上处于领先水平。