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1·A method of manufacturing a metal oxide semiconductor (500).

一种制造金属氧化物半导体的方法(500)。

2·A gate structure of the metal oxide semiconductor is etched (510).

将金属氧化物半导体的栅极构造蚀刻(510)。

3·High mobility P-channel power metal oxide semiconductor field effect transistors.

高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。

4·Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.

本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。

5·As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).

作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。

6·The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。

7·The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.

本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。

8·The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.

本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。

9·A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.

介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。

10·Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.

如此可有效率地利用该金属 氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低 成本。