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1·BST thin films sol gel technique epitaxial growth electrical properties.

标签薄膜溶胶-凝胶工艺外延生长电性能。

2·Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.

从外延形貌照片中观察到了外延生长台及生长螺线。

3·A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.

本文提出了低-常压两步外延生长技术。

4·Experiments show that the epitaxial growth structure could be used in the preparation of APD devices.

测试结果表明，利用所采用的外延生长结构制备APD器件，具有可行性。

5·Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.

现代先进的外延技术使应变层锗硅材料的应用成为可能。

6·Based on actual measurement results, the influence of process quality of semiconductor substrate wafers on epitaxial growth is described.

本文根据实际测量结果，一叙述了半导体衬底制片质量对外延生长的影响。

7·The density and contact effect of the film were improved by the introduction of a transitory high temperature treatment ahead of epitaxial growth.

提出一种在生长温区前进行短暂熔融处理的工艺手段，提高了薄膜的致密性和浸润效果。

8·From the time-dependence of reflectivity at different temperature the solid phase epitaxial (SPE) growth rate was calculated.

从反射率随时间的变化曲线，计算出不同退火温度下的固相外延速率。

9·The major aspects of the recent development in the growth, characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed.

评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。

10·Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE.

通过使用HVPE的外延横向过生长实现连续的化合物半导体厚膜(15)或晶片的进一步的生长。