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1·The influence of thermal annealing on DKDP crystals grown at different rates was studied.

分别对不同生长速度的DK DP 晶体进行了退火处理。

2·After thermal annealing about 60% of radiation damage induced by implantation can be restored.

在热退火后，约60%的注入引起的辐射损伤可以得到恢复。

3·At last, the effect of rapid thermal annealing on the electrical properties of HEMT material is studied.

最后我们研究了快速退火对HEMT材料电学性能的影响。

4·They can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum.

氢等离子体退火对电活性的位错态有显著的钝化作用。

5·The results indicate that the pyrochlore phase was restrained successfully by layer-by-layer rapid thermal annealing method.

实验结果表明，逐层快速退火工艺可有效抑制焦绿石相的形成；

6·We employ the magnetic sputtering method to deposit amorphous tungsten films and investigate their thermal annealing process.

对使用磁控溅射法沉积的钨薄膜进行了热退火研究。

7·The results indicate that the pyrochlore phase is restrained successfully by the layer-by-layer rapid thermal annealing method.

结果表明：层层快速退火工艺，可有效抑制焦绿石相的形成。

8·Furthermore, we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.

而且，发现在样品中的深辐射能级的荧光效率也受到快速热退火的影响。

9·Microstructure of homemade modified 316l stainless steels and its thermal annealing behavior are studied by the positron annihilation lifetime technique.

采用正电子湮没寿命方法研究了国产改进型316 L不锈钢的微结构及其温度变化。

10·Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.

本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。