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1·The device could be integrated monolithically and planarly with GaAs FET.

这种器件可与FET实现平面集成。

2·In order to make the GaAs FET having the required negative resonator to oscillator, we use the common source configuration and add the appropriate drain open stub microwave line.

为了使砷化镓场效应管具有建立振荡所需的负阻，我们将其配置为共源结构并在漏极添加合适的开路微带线。

3·It lists and analyzes the operating principle and application of the single diode, double diode and single GaAs FET linearer and finds that they are all inconvenient to be adjusted.

列举和分析了单二极管型、二极管对型和单场效应管型线性化器的工作原理和实际应用价值，发现其都具有不便于调整的缺点。

4·This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.

本文讨论了砷化镓双栅场效应管在电视接收机UHF频道选择器中作高频调谐放大和变频应用时的一些考虑，并给出有关的实验结果。