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1·The control circuitry senses data within the memory array at a beginning of a predetermined memory cycle.

控制电路在预定的存储器周期的开始时刻读出存储器阵列中的数据。

2·From the perspective of the memory cycle, this review can be used to learn the new words and idioms, corrected pronunciation, etc. are deeply imprinted in your mind.

从记忆周期的角度来说，这次的复习可以把之前所学的新单词与习语、所纠正过的发音等等都深深地印在你的脑子里。

3·Most shape memory alloys can only cycle (or change form) a limited number of times before the material gives out.

大部分形状记忆合金只能“循环”(或称改变形态)有限次数，之后材料就会疲劳了。

4·Transactions are not much different than memory and we see the general trend in languages to removing the responsibility of memory management from developers due to life cycle issues.

事务管理和内存管理比起来没有多大的不同，而且我们看到由于生命周期问题，语言的总体趋势是不再让开发人员负责内存管理。

5·We approximate the free memory after a garbage collection cycle by using algorithms that analyze the variance of free memory statistics.

通过使用分析可用内存统计信息变化的算法，我们可粗略计算垃圾收集周期之后的可用内存。

6·If the free memory after a GC cycle is consistently decreasing, then there is a high chance of a memory leak.

如果垃圾收集周期之后的可用内存持续降低，那么存在内存泄漏的可能性较高。

7·Accesses to local store memory can be predicted down to the clock cycle.

对本地存储内存的访问的预测可以精确到时钟周期级别上。

8·Round-tripping is the term used to describe a complete cycle, from storage medium into memory and back.

往返用于描述从存储媒介到内存然后回到存储媒介的完整循环。

9·Our memory leak detection mechanism will generally automate this process of looking for consistently downward trends in free memory after a GC cycle.

我们的内存泄漏检测机制通常会自动执行以下过程：即查找垃圾收集周期之后可用内存不断下降的趋势。

10·The chart in Figure 1 is an example of the charted free memory after a GC cycle in an application with a memory leak (the chart was using an internal IBM tool).

图1中以图表形式说明了存在内存泄漏的应用程序在垃圾收集周期之后的可用内存(该图表使用内部IBM工具)。