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1·Epitaxy of strained Si on the obtained SGOI substrate.

在获得的SGOI衬底材料上生长高质量应变硅材料。

2·Single Crystal, Substrate, Optico-Electronics, Film, Epitaxy.

单晶，衬底，光电子，薄膜，外延。

3·The higher value is comparable to those obtained in CVD epitaxy.

这个高的数值可以和从化学气相淀积外延得到的数值相比拟。

4·All the procedure for epitaxy growth was controlled by a computer.

外延生长工艺过程由计算机控制。

5·The environmental morals have their intension, the epitaxy and main content.

环境道德有其内涵、外延和主要内容。

6·The thick SOI films were prepared by SIMOX technology and Si epitaxy process.

利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。

7·Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

外延沉积接着用以形成一外延层于该外延表面上。

8·Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.

本文首先详细介绍了分子束外延设备的原理和构造。

9·Chemical beam epitaxy (CBE), a novel technique for thin-film crystal growth, is introduced.

本文介绍了薄膜晶体生长的最新技术——化学束外延(CBE)。

10·In this paper, an experimental apparatus for the low pressure epitaxy of silane is described.

本文介绍了硅烷低压外延的实验装置。

外延

1·Beautiful outdoor advertising creativity, design and materials, the performance of the process should show a rich cultural epitaxy.

优美的户外广告创意、设计及材料、工艺的表现应表现出丰厚的文化外延。

2·The higher value is comparable to those obtained in CVD epitaxy.

这个高的数值可以和从化学气相淀积外延得到的数值相比拟。

3·Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.

外延沉积接着用以形成一外延层于该外延表面上。

4·Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.

用X射线双晶衍射仪测量了阴极和玻璃热粘结工艺过程中阴极材料外延层和衬底的双晶回摆曲线。

5·Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated.

采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。