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1·Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.

由于背抛光面对受光面入射光的反射，使得少子产生率和受光面表面光电压都高于单面抛光片。

2·By splitting a laser beam and aiming each part onto opposite sides of a polished silicon wafer, the group engineered a system of reflection and interference that traps both beams in the silicon.

这组人员设计了一个反射和干涉系统，将激光分成两束，分别对准抛光硅晶片的两面，将两束光限制在硅当中。

3·Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.

采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。

4·A very uniform diamond film was grown on the mirror-polished 3 Si wafer. The grown films were characterized by SEM and Raman spectroscopy.

在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜，生长的薄膜用SEM及喇曼光谱进行了测试。