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1·Different bias voltage for the input buffer transistor.

不同偏置电压的输入缓冲晶体管。

2·The opticai bistability with an appropriate bias voltage has been observed.

在适当的偏置电压下，观察到了双稳特性。

3·The strength of perpendicular STT increases with the increasing bias voltage.

随着电压的增大，垂直项作用增强。

4·The gain of the APD can be controlled by the magnitude of the reverse bias voltage.

APD的增益可以由反向偏置电压的幅度来控制。

5·How to choose the bias voltage, the width and the period of the gated pulse is very important.

偏置电压的大小、门脉冲宽度和周期的选择对后脉冲的消除起着关键的作用。

6·The results showed that the clusters were gently stocked one above the other in low bias voltage;

结果表明，在低的偏压情况下，团簇比较松散地堆积在衬底上；

7·Finally, we study the transport properties of single molecular magnet driven by spin bias voltage.

最后，我们研究了自旋偏压驱动的单分子磁体的量子输运特性。

8·Right figure: the temperature and bias voltage dependence of the measured helical edge conductance.

右图：实验上测得的边缘态电导随温度和测量偏压的变化。

9·Effect of bulk bias voltage and oxygen partial pressure on optical spectrum of ITO film is studied.

研究了基体偏压和氧分压强影响ito膜光谱的机理。

10·The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.

其工作特性依赖于栅极电压和梳状铝电极的结构。

偏压

1·The newly CUK controller realizes a kind of high efficiency, low cost and very low output voltage ripple negative bias voltage design.

介绍的新型CUK型变换器，旨在实现一种高效、低成本、输出电压纹波极低的负偏压设计方案。

2·And, with the enhancement of substrate bias voltage, electron energy increase gradually, electron density decrease sharply.

且随着基片偏压值的增大，电子能量有缓慢的增加，而电子密度则显著下降。

3·The effects of the flow rate of oxygen and pulse bias voltage on the structure, deposition rate and the surface morphology of thin film were studied.

研究了氧流量和脉冲偏压对薄膜相结构、沉积速率、表面形貌、薄膜硬度的影响。

4·Effect of bulk bias voltage and oxygen partial pressure on optical spectrum of ITO film is studied.

研究了基体偏压和氧分压强影响ito膜光谱的机理。

5·Finally, we study the transport properties of single molecular magnet driven by spin bias voltage.

最后，我们研究了自旋偏压驱动的单分子磁体的量子输运特性。