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1·The theory of ion etching and the parameter of ion source designing are discussed in detail.

并且详细论述离子刻蚀的原理以及离子源的参数设计。

2·Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.

采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。

3·A patterned DLC thin film cathode was fabricated by reactive -ion etching method and mic ro -fabrication technology.

通过离子束技术和微细加工技术可以实现DLC薄膜的图形化并能大大提高薄膜的场发射性能。

4·The thickness of absorbed films was measured for three CWM dispersants by X-rayphotoelectric spectrometer and argon-ion etching in this report.

本文采用X光电子能谱加氩离子刻蚀法，测出三种分散剂在煤表面吸附膜的近似厚度。

5·This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.

加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。

6·Yak hairs were treated by the microwave electron cy cl otron resonance plasma reactive ion etching(ECR-RIE) equipment to improve its property of weave.

采用微波电子回旋共振等离子体反应离子刻蚀（E CR-R IE）装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。

7·The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).

利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。

8·Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.

基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。

9·High energy heavy ions generate potential tracks on the face of insulated material, and a porous surface with gradient refractive index can be formed by etching the ion tracks.

高能重离子在绝缘材料表面产生的潜径迹经过蚀刻后形成一定形貌的核径迹孔，而密集的径迹孔表面相当于渐变折射率层。

10·This result is just opposite from the ion implantation enhanced etching which was reported by many authors under wet etching.

这一结果与所报道的离子注入增强腐蚀的结果正好相反。