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1·The kinetic process of reactive magnetron sputtering has been studied.

研究了反应磁控溅射的动力学过程。

2·Reactive magnetron sputtering was used to prepare many kinds of compound films extensively.

反应磁控溅射被广泛应用于制备化合物薄膜。

3·Niobium oxide optical thin films have been prepared by low frequency reactive magnetron sputtering system.

利用低频反应磁控溅射制备五氧化二铌光学薄膜。

4·Ultrathin aluminum films were prepared by DC reactive magnetron sputtering. The target was made by 99.999% pure aluminum.

采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。

5·TiO2 thin films were deposited on glass and quartz substrates, respectively, using the direct current reactive magnetron sputtering method.

采用直流磁控反应溅射法，在玻璃和石英基体上制备了TiO2薄膜。

6·TiOx thin films at the conditions of different depositing temperatures were on prepared on glass substrates by DC reactive magnetron sputtering.

通过磁控反应溅射，在玻璃基底上制备了不同溅射温度下的氧化钛薄膜。

7·Tin doped indium oxide (ITO) films were deposited on glass substrates by reactive magnetron sputtering using a metallic alloy target (in Sn, 90 10).

采用铟锡合金靶(铟锡，90 - 10)，通过直流反应磁控溅射在玻璃基片上制备出ito薄膜，并在大气环境下高温退火处理。

8·In this paper, WO3 thin film was deposited on glass substrate and silicon slice by DC reactive magnetron sputtering and using metal tungsten as target.

本文采用直流反应磁控溅射工艺，以金属钨为靶材，在玻璃和单晶硅片上沉积了WO 3薄膜。

9·HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.

用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。

10·ABSTRACT: in this paper a reactive ion plating method and system configuration of Gas ion source enhanced Magnetron Sputtering (GIMS) is presented in details.

摘要：本文详细介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置。