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1·First of all, plasma physics, PECVD equipment and its process principles are explained.

首先，对电浆物理、PECVD设备及制程原理加以阐述。

2·Series of microcrystalline silicon thin films were fabricated by VHF-PECVD at different substrate temperatures (Ts).

采用VHF-PECVD技术制备了不同衬底温度的微晶硅薄膜样品。

3·SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.

利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。

4·The electrical and structural properties of microcrystalline silicon thin film and solar cells fabricated by VHF-PECVD were studied.

本文对VHF PECVD制备的本征微晶硅薄膜和电池进行了电学特性和结构特性方面的测试分析研究。

5·Plasma enhanced chemical vapor deposition (PECVD) technique is the primary method which is used to prepare hydrogenated silicon film.

等离子体化学气相沉积技术制备氢化硅薄膜工艺条件成熟稳定而成为薄膜制备的首选方法。

6·Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.

采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。

7·Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。

8·Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.

等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。

9·Lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by PECVD are related to deposition parameters.

大量的实验研究表明，PECVD氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。

10·Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of electron temperature.

在LPCVD理论模型基础上，通过引进“电子温度”，对PECVD多晶硅膜进行了计算机模拟分析。