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1·Photoresist coating preparation and baking; Thin film preparation.

光刻胶的旋涂与烘烤，薄膜材料制备。

2·Exposure dose should be changed with the thickness of SU-8 photoresist.

根据SU - 8胶的厚度确定曝光剂量的大小。

3·But this photoresist was then peeled off, leaving only a pure metal on metal bond.

但是这种光刻胶会被剥离，仅留下金属结合。

4·The method on profile - control of micro - optic element in photoresist was presented.

介绍了连续微光学元件在光刻胶上的面形控制方法。

5·Photoresist grating was fabricated by holography, and it was used in the mask of ion etching.

采用全息法制备了光刻胶光栅，并用该光栅掩膜离子蚀刻。

6·This paper researches the influence of resin and wetting agent for the property of photoresist.

本论文研究了光阻剂中分别增加环氧树脂和润湿剂对其性能的影响。

7·A small undesired hole in an oxide opaque region of a mask or reticle or in a photoresist layer.

氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。

8·With the protection of photoresist sidewall, the emitter passivation ledge is fabricated by wet etch.

利用光刻胶形成保护侧墙，用湿法腐蚀来形成发射极钝化边沿。

9·Pattern transfer technique is used to transfer photoresist microlens arrays into the polymer underlayer.

通过反应离子刻蚀可以将光刻胶微透镜图形转移至这种高性能的聚合物材料上。

10·Researches on the two-photon photopolymerization technology of SU8 negative photoresist have been processed.

飞秒激光su8负性光刻胶双光子聚合工艺研究。

光刻胶

1·The results show that the photoresist which contains cinnamyl group exhibited an excellent thermal stability and adequate photosensitive properties.

研究结果表明，这种含肉桂基的光刻胶具有优良的耐热性与适宜的光敏特性。

2·The results show that the technology of melting photoresist is a simple and practical technology of fabricating microlens array.

结果表明，光刻胶热熔技术是一种简单、实用的微透镜阵列制作技术。

3·Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.

在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。

4·Then the wafer is sent through a chemical bath that etches trenches into the exposed substrate, while leaving the areas covered by the photoresist untouched.

接着，硅晶片会被送入一个化学浴室，在暴露在外的硅衬底上蚀刻沟槽，同时光刻胶覆盖的区域不会受到任何影响。

5·According to the analysis of the photoresist process that got organic initiator conditions, nanometer of physical map was obtained.

根据对有机引发剂条件下的光刻胶过程的分析得出了纳米级实体图。

光致抗蚀剂

1·The compositions can be applied to a silicon wafer or other substrate to form a cured or hardened layer which is initially insoluble in typical photoresist developing solutions.

所述组合物可以施涂到硅片或其它基材上，形成开始时不溶于一般光致抗蚀剂显影溶液中的固化或硬化层。