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1·More often , all of the materials etchant have a finite etch rate.

剂中的材料都具有一定的刻蚀速率。

2·More often, all of the materials exposed to the etchant have a finite etch rate.

通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。

3·A novel method for measuring the anisotropic etch rate distributions of Si is described.

介绍了一种测定硅各向异性腐蚀速率分布的新方法。

4·In the paper, effects of brown oxide process parameters on micro-etch rate, surface topography, surface roughness, binding strength were analyzed through the experiment.

本文分析了棕化工艺参数对微蚀速率、表面形貌 、表面微观粗糙度、结合力的影响 。

5·Constancy of chemical etch rate method was modified so as to reduce the influencing factors such as temperature and concentration of HF acid. The efficiency and accuracy are improved.

基于差动原理对HF酸恒定化学蚀刻速率法进行改进，以降低环境(温度、HF酸浓度等)变化对测量结果的影响，从而提高测量效率和测量准确性。

6·It is proved that the uniformity of etch rate can be improved and the effect of micro load can be decreased by adjusting the value of chamber pressure, gas flow rate and RF power properly.

结果表明，通过对反应室压力、刻蚀气体流量和射频功率的调节，可以降低微负载效应的影响，得到良好的刻蚀均匀性。

7·The influence of chamber pressure, gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.

对二氧化硅反应离子刻蚀中反应室压力，刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。