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1·But in fact, an electron in the conduction band can be in one of two states.

但实际上，电子在这种传导带中存在两种形态。

2·The optical band gap between nano-TiO 2 energy band and conduction band is3.

纳米二氧化钛能带和导带之间的带隙能为3。

3·When an electron leaps into the conduction band, it leaves behind a hole in the valence band.

当一个电子跃迁到传导带，它会在价带留下一个“凹陷”。

4·In the conduction band, it will occupy the lowest-energy state it can find (right-hand well).

在传导带，它会占据所能找到的最低能级（比如说右边这个）。

5·Carriers are transported in the conduction band of the semiconductor to the charge collector.

载流子的半导体的传导带的电荷收集器中被运送。

6·The valance band and conduction band can be described very well by our calculated results as well.

同时，计算的结果也能对价带和导带进行很好的描述。

7·The source metal has localized states at a bottom of the conduction band and probability amplification.

源金属在导带底部具有局域化能态并具有概率放大。

8·This level convertsanomalously to a level 0.55 ev from the conduction band onstanding at room temperature.

这个能级的转换异于在室温下0.55电子伏下导带的能级。

9·If it s in the first state, and it falls out of the conduction band, it will release its extra energy as a photon.

如果是在第一形态，并且它逃离出了传导带，他会以光子的形式释放多余的能量。

10·Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.

价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；